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UNISONIC TECHNOLOGIES CO., LTD 2N4403
PNP GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA.
1
PNP SILICON TRANSISTOR
TO-92
*Pb-free plating product number: 2N4403L
ORDERING INFORMATION
Order Number Normal Lead Free Plating 2N4403-T92-B 2N4403L-T92-B 2N4403-T92-K 2N4403L-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk
2N4403L-T92-B (1)Packing Type (2)Package Type (3)Lead Plating (1) B: Tape Box, K: Bulk (2) T92: TO-92 (3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation Derate above 25 SYMBOL VCBO VCEO VEBO IC
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified)
RATINGS UNIT 40 V 40 V 5 V 600 mA 625 mW PC 5.0 mW/ Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
THERMAL DATA (Ta=25 , unless otherwise specified)
CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL JA JC RATINGS 200 83.3 UNIT /W /W
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cut-off Current ON CHARACTERISTICS* SYMBOL BVCEO BVCBO BVEBO ICEX IBEX hFE1 hFE2 hFE3 hFE4 hFE5 VCE(SAT1) VCE(SAT2) VBE(SAT1) VBE(SAT2) TEST CONDITIONS IC=1mA, IB=0 Ic=0.1mA,IE=0 IE=0.1mA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VBE=0.4V VCE=1V,IC=0.1mA VCE=1V,IC=1mA VCE=1V,IC=10mA VCE=2V, IC=150mA (Note) VCE=2V, IC=500mA (Note) IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA(Note) IC=500mA, IB=50mA 200 8.5 30 15 8 500 100 15 20 225 30 MIN 40 40 5 0.1 0.1 30 60 100 100 20 TYP MAX UNIT V V V A A
DC Current Gain
300 0.4 0.75 0.95 1.3 V V V V MHz pF pF k x10-4 mbos ns ns ns ns 2 of 5
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Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
0.75
SMALL SIGNAL CHARACTERISTICS Transition Frequency fT VCE=10V, IC=20mA, f=100MHz Collector-Base Capacitance Ccb VCB=10V, IE=0, f=140kHz Emitter-Base Capacitance Ceb VBE=0.5V, IC=0, f=140kHz Input Impedance hIE VCE=10V, IC=1mA, f=1kHz Voltage Feedback Ratio hRE VCE=10V, IC=1mA, f=1kHz Small-Signal Current Gain hFE VCE=10V, IC=1mA, f=1kHz Output Admittance hOE VCE=10V, IC=1mA, f=1kHz SWITCHING CHARACTERISTICS Delay Time tD VCC=30V, IC=150mA IB1=15mA Rise Time tR VCC=30V, IC=150mA Storage Time tS IB1= IB2=15mA Fall Time tF Note Pulse test: Pulse Width300s, Duty Cycle2%
1.5 0.1 60 1.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2N4403
TEST CIRCUIT
-30V 200 0
220ns
PNP SILICON TRANSISTOR
-16V
1K 50
Figure 1. Saturated Turn-On Switching Timer
1.5V -6V Note: BVEBO =5V 0
220ns
1k 1K 50
37
-30V
Figure 2. Saturated Turn-Off Switching Timer
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current VCE =5V 125
Collector-Emitter Voltage, VCE(SAT) (V)
PNP SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs. Collector Current 0.5 =10 0.4 25 0.3 0.2 0.1 -40 0 1 10 100 Collector Current IC (mA) , 500
500
DC Current Gain, hFE
400 300 200 100
25 -40 1 3 10 30 100 300 Collector Current, IC (mA)
125
0 0.1 0.3
Base-Emitter OnVoltage, VBE(ON )(V)
Base-Emitter Saturation Voltage vs. Collector Current
Base-Emitter On Voltage vs. Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 1 10 Collector Current,I C (mA) 25 VCE =5V -40 25 125
Base-Emitter Voltage, VBE(SAT) (V)
1 0.8 0.6 0.4 0.2 0 1
=10 -40 25 125
10 100 Collector Current, IC (mA)
500
100
Co llector Current,ICBO (nA)
Collector-Cutoff Current vs. Ambient Temperature VCB=35V
20 16
Capacitance (pF)
Input and Output Capacitance vs. Reverse Bias Voltage
10
12 8
Cib
1 0.1 0.01 25
Cob 4 0 -0.1
50 75 100 125 Ambient Temperature, TA (
-1 -10 -50 Reverse Bias Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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